Samsung’s All New LPDDR4X Mobile DRAM Will Be The Fastest Yet

Samsung’s Industry-first 2nd-Generation 10nm-Class, 16Gb LPDDR4X Mobile DRAM

Samsung Electronics, on July 26, announced that it has started manufacturing an all-new DRAM in bulk. The touted memory module is the industry’s maiden 2nd-generation LPDDR4X DRAM based on 10-nanometer-class.

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The new Low Power Double Data Rate 4X supposedly improves the efficiency apart from lowering the amount of energy it consumes out of battery. Having said that, the top-end smartphones of this day and age will utilize the new DRAM along with other mobile applications making use of it.

As per Samsung, the upcoming LPDDR4X RAM lowers the power consumption up to 10 percent while carrying the same 4,266 Mb/s data rate that the most of the current flagship devices with 1x-nm 16Gb LPDDR4X maintain.

Samsung has mentioned the fact that this initiative started with mass production of first 10nm-class 8Gb DDR4 DRAM in November 2018. And now, after 8 months of further development, the South Korean advanced memory technology giant is all set for 16Gb LPDDR4X memory chip.

According to Samsung, the company has combined four 10nm-class 16Gb LPDDR4X DRAM memory modules, with each 16Gb chip possessing a capacity of 2GB. Taking advantage of a thickness reduced by more than 20 percent as compared to the 1st-gen housing, mobile manufactures will now have more freedom designing even thinner mobile devices in the upcoming time.

Moreover, the newly-adopted four-channel package has a data realization rate of 34.1GB per second, making it a highly-capable choice to opt for.

Samsung aims to expand its premium lineup of DRAM modules by more than 70 percent. With the advancements in LPDDR4X, the company will expand its share among mobile DRAM segment in the market by launching 8GB, 6GB and 4GB LPDDR4X units.

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Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronic went on to say, “The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019.”

He further said, “We will continue to grow our premium DRAM lineup to lead the ‘high-performance, high capacity, and low power’ memory segment to meet the market demand and strengthen our business competitiveness.”

It is evident from the scenario – Samsung’s motives are clear. The company wants to take advantage of every possible situation including a high market demand for the devices with massive RAM capacities.

By housing its chips into produced devices by as early as Q4 of this year, Samsung bids to obtain a step ahead of the rest by the coming year. Although the newer packaging will feature in a number of upcoming devices this year, we expect to see a huge array of next year’s flagship devices possessing the company’s latest offering.

Interestingly, Samsung has set a new production line for manufacturing DRAM in Pyeongtaek, Korea. To cope with a faster-than-ever increasing demand for DRAM chips, the company wants to make sure that it has adequate supply to fulfill the chip requirements.

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